| 摘要 |
A semiconductor wafer with a highly precise edge profile and a method for manufacturing the semiconductor wafer are provided to make a highly precise edge profile satisfying a narrow margin range in the entire circumference of the semiconductor device. A standard deviation of a transition radius(r1) of a transition region between a facet and a web on a front surface of a semiconductor wafer is less than 12 micro meters. A standard deviation of a transition radius(r2) of a transition region between a facet and a web on a rear surface of the semiconductor wafer is less than 10 micro meters. A standard deviation of a facet length(A1) on the front surface of the semiconductor wafer is less than 11 micro meters. A standard deviation of a facet length(A2) on the rear surface of the semiconductor wafer is less than 8 micro meters. Standard deviations of a facet angle(1) of the front surface of the semiconductor and a facet angle(2) of the rear surface thereof are less than 0.5 degree, respectively.
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