| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon electrode plate for plasma etching, which is formed of polycrystalline silicon or unidirectionally solidified columnar crystal silicon and produces particles little. <P>SOLUTION: The plasma etching silicon electrode plate is composed of a silicon electrode board 1 which is formed of polycrystalline silicon or columnar crystal silicon having a unidirectionally solidified structure and provided with gas-hole openings 2 and gas-hole parts 3 which are each formed of single crystal silicon, provided with a through-pore gas hole 5, and fitted into the gas-hole opening 2. The gas-hole parts 3 fitted into the gas-hole openings 2 can be replaced. <P>COPYRIGHT: (C)2004,JPO |
