SEMICONDUCTOR MEMORY APPARATUS

摘要

A semiconductor memory apparatus is provided to measure an output current(IBIS) of a data strobe pin(DQS Pin) more easily. A data strobe signal generation unit(10) outputs a first input signal by being synchronized to rising timing of a DLL(Delay Locked Loop) clock and outputs a second input signal by being synchronized to falling timing of the DLL clock, and outputs the first input signal and the second input signal at one node as a data strobe signal. A control unit(100) controls the data strobe signal generation unit in order to output the data strobe signal with a constant level in a test mode.