发明名称 |
METHOD AND APPARATUS FOR HYDROGENATION OF THIN FILM SILICON ON GLASS |
摘要 |
<p>A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.</p> |
申请公布号 |
EP1886339(A1) |
申请公布日期 |
2008.02.13 |
申请号 |
EP20060741169 |
申请日期 |
2006.06.02 |
申请人 |
CSG SOLAR AG |
发明人 |
KEEVERS, MARK;TURNER, ADRIAN BRUCE |
分类号 |
H01L21/00;H01L21/30;H01L31/20 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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