METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE

摘要

A method for manufacturing a nonvolatile memory apparatus is provided to increase a window margin with respect to programming and elimination by forming a floating gate in a recess to reduce interference between floating gate electrodes. A recess is formed on an active region defined on a semiconductor substrate(100). A tunnel oxide layer is successively formed on the substrate surface on which the recess is formed. A floating gate is formed on the tunnel oxide layer to gap-fill the recess. A dielectric and a control gate layer are sequentially formed on the floating gate. The tunnel oxide layer, the control gate layer, and the dielectric are patterned to form a gate structure. A dielectric pattern(124), a control gate pattern(126), the floating gate, and a tunnel oxide layer pattern(122) are stacked to from the gate structure. When the recess is formed, a mask pattern is formed on the semiconductor substrate. The substrate is partially etched by using the mask pattern as an etch mask to form the recess.