| 摘要 |
A zinc oxide based oxide thin film and a method for manufacturing the same are provided to improve crystallinity of the oxide thin film by depositing a calcium oxide buffer layer on a substrate and then depositing a zinc oxide based oxide thin film on the calcium oxide buffer layer. A zinc oxide based oxide thin film includes a calcium oxide buffer layer. The calcium oxide buffer layer is interposed between a substrate and a thin film. A thickness of the calcium oxide buffer layer is in the range from 1 nm to 10 nm. The substrate is selected from a group consisting of Si, Ge, GaAs, SiC, GaN, and glass. The zinc oxide based oxide thin film contains a material being expressed by a chemical formula of ZnxM1-xO(M is selected from a group consisting of Mg, Cd, and Be, and 0<x 1). The zinc oxide based oxide thin film further contains an n-type dopant selected from a group consisting of B, Al, Ga, and In, or a p-type dopant selected from a group consisting of N, P, As, and Sb.
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