| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride based semiconductor light emitting element having a low operating voltage and high reliability by increasing adhesion of the whole electrode layer to a nitride based semiconductor layer without damaging low contact property. <P>SOLUTION: The nitride based semiconductor light emitting element is provided with a P-type GaN contact layer 8 formed on an MQW light emitting layer 6 and an electrode layer formed partly on the contact layer 8. The electrode layer is provided with a Pt electrode layer 9 composed of Pt having strong adhesion to the contact layer 8 and a Pd based electrode layer 10 for reducing contact resistance to the contact layer 8 of the electrode layer. The Pd based electrode layer 10 is formed on the Pt electrode 9 so as to have a part coming into contact with a surface of the contact layer 8, and adhesion to the contact layer 8 is smaller than that of the Pt electrode layer 9. <P>COPYRIGHT: (C)2003,JPO |
