发明名称 InN/InP/TiO2 photosensitized electrode
摘要 <p>The present invention is a photosensitized electrode which absorbs sun light to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device, too.</p>
申请公布号 EP1887592(A1) 申请公布日期 2008.02.13
申请号 EP20060118588 申请日期 2006.08.08
申请人 ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH 发明人 LIN, MING-CHANG;TZENG, YEN-CHANG;LAN, SHAN-MING;LEE, CHI-SHEN;YANG, TSUN-NENG;WEI, TSONG-YANG;CHIU, JYH-PERNG;LIN, LI-FU;SHIEH, DER-JHY;KUO, MING-CHAO
分类号 H01G9/20 主分类号 H01G9/20
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