GROUP III-V NITRIDE COMPOUND SEMICONDUCTOR DEVICE AND ELECTRODE-FORMING METHOD

摘要

The present invention generally relates to a III-V nitride semiconductor device, and more particularly, to a III-V nitride semiconductor device, such as a GaN-based semiconductor device, which includes a low contact-resistant electrodes formed on an n-type layer of a semiconductor and a method of forming the above electrodes. To provide the method of forming the low contact-resistant electrodes and the semiconductor device including the electrodes, at least Ti, Al and Si are used as materials for the electrodes formed on the surface of the n-type layer of the III-V nitride semiconductor. More particularly, electrodes having a reliable performance can be obtained by forming a Ti layer on the surface of the n-type layer of the III-V nitride semiconductor and subsequently depositing a layer including a disordered phase of Al and Si on the Ti layer.