发明名称 A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME AND DESIGNING THE SAME
摘要 <p>A semiconductor apparatus and methods for manufacturing and designing the same are provided to prevent an increase of the time for making a mask by suppressing an increment of coordinate data amount. A semiconductor apparatus comprises a device isolating region formed on a semiconductor substrate, a device forming region(DA) defined by the device isolating region, and a semiconductor device formed on the device forming region. The device isolating region is a region where an isolating film is buried in a groove formed on the semiconductor substrate. The device forming region has an active region in which the semiconductor device is formed and a dummy region(FA) in which the semiconductor device is not formed. The dummy region comprises a plurality of first dummy patterns(DP1), a plurality of second dummy patterns(DP2), and a plurality of third dummy patterns which are formed with the same shape and arranged regularly, respectively. The shape of the second dummy pattern is smaller than the first dummy pattern. The shape of the third dummy pattern is smaller than the second dummy pattern.</p>
申请公布号 KR20080014109(A) 申请公布日期 2008.02.13
申请号 KR20080006544 申请日期 2008.01.22
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.);HITACHI ULSI SYSTEMS CO., LTD. 发明人 KURODA KENICHI;WATANABE KOUZOU;YAMAMOTO HIROHIKO
分类号 H01L21/76;H01L27/04;H01L21/301;H01L21/304;H01L21/3105;H01L21/3205;H01L21/762;H01L23/52;H01L23/528;H01L27/02;H01L27/08;H01L27/118 主分类号 H01L21/76
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