| 摘要 |
A circuit for generating a reference voltage of a semiconductor memory apparatus is provided to compensate for process variation width by performing trimming operation twice from an initial reference voltage when a reference voltage is generated differently according to the kind of an internal voltage. A first reference voltage generation unit(100) generates a first trimming reference voltage in response to a first trimming signal, and generates a second trimming reference voltage in response to a second trimming signal, by receiving an initial reference voltage. A second reference voltage generation unit(200) receives the first trimming reference voltage, and generates a third trimming reference voltage in response to a third trimming signal. A third reference voltage generation unit(300) receives the second trimming reference voltage, and generates a fourth trimming reference voltage in response to a fourth trimming signal.
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