发明名称 Aluminum nitride single crystal
摘要 <p>In an aluminum nitride single crystal , Si and C are dissolved, and a lattice constant of an a-axis is within a range of 3.0935 [Å] or more to 3.1110 [Å] or less. In such a way, a lattice constant of the aluminum nitride single crystal is controlled in response to lattice constants of functional layers to be formed, thus making it possible to form, with good crystallinity, the functional layers having a variety of compositions.</p>
申请公布号 EP1887109(A2) 申请公布日期 2008.02.13
申请号 EP20070253014 申请日期 2007.07.31
申请人 NGK INSULATORS, LTD. 发明人 KOBAYASHI, YOSHIMASA
分类号 C30B23/00;C30B29/40;H01L33/32 主分类号 C30B23/00
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