发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus is provided to prevent ions on a plasma from coming down by reducing an opening size of a mesh which constitutes a plasma passage. A grid(110) is spaced apart from a substrate which is mounted on a bottom electrode(120), at a predetermined interval, and has a frame of lattice structure and a mesh installed between lattices. The DC bias is applied to the grid. The frame is provided with plural source jet holes evenly distributed on a bottom surface of the frame in a tubular shape. The source jet holes are connected with at least two source injection pipes(112). The source jet holes are formed at lattice crossing points of the frame.
申请公布号 KR100803338(B1) 申请公布日期 2008.02.13
申请号 KR20060121339 申请日期 2006.12.04
申请人 IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) 发明人 CHEON, HYUND TAK;KIM, SEOK HOON;WOO, SANG HYUN;KIM, HYUNG CHUL
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址
您可能感兴趣的专利