METHOD OF CONTROLLING ELEMENT CONCENTRATION AND PREVENTING IMPURITIES INTO THE FILMS DURING DEPOSITION BY LIGHT EXPOSURE IN PREPARING THIN FILMS

摘要

A method for controlling element concentration and preventing impurities into a thin film during a deposition process by light exposure in a thin film forming process is provided to prevent a physical damage of a thin film and to reduce generation of particles by improving a reactive characteristic without using plasma. A reactant attaching process is performed to attach a first reactant onto a substrate by implanting a metal element for forming a thin film and the first reactant including an organic ligand into a reaction chamber including the substrate. An activation process is performed to activate the first reactant by performing an exposure process. An oxide layer or a nitride layer is formed by implanting a second reactant including oxygen atoms or nitrogen atoms into the reaction chamber. The oxide layer or the nitride layer is formed by reaction between the first reactant and the second reactant.