| 摘要 |
<p>A method for analyzing an integrated circuit (IC) comprising a plurality of semiconductor devices is disclosed. The method comprises the steps of forming a diffraction lens (100) comprising a plurality of concentric diffraction zones (110) in a first area of a further surface opposite to the first surface of the substrate (10), and a further step of optically accessing a subset (30) of the plurality of semiconductor devices (20) through the diffraction lens (100). Due to the fact that a diffraction lens (100) can be implemented at submicron sizes, the lens (100) can be formed more cheaply than a refraction lens, which usually is several microns deep. Moreover, the lens (100) can be easily polished off the substrate (10), which facilitates repeated relocation of the lens (100) on the substrate (10), thus improving the chance of optically detecting a fault inside the IC.</p> |
