发明名称 |
MASK AND MANUFACTURING APPARATUS FOR POLY SILICON SUBSTRATE HAVING THE SAME |
摘要 |
<p>An apparatus for fabricating a polysilicon substrate having a mask is provided to maintain a particle length uniformly by straightening the grain boundary of a polysilicon layer. An insulation substrate(10) having an amorphous silicon layer(12) is disposed on a stage. A mask(300) is disposed on the insulation substrate and includes a base plate(310) and a plurality of slit parts(320) that are aligned at regular intervals at a predetermined angle with one side of the insulation substrate. A laser generating unit is disposed on the mask and irradiates a laser beam with one shot to the insulation substrate through the slit parts so that the amorphous silicon layer begins to be crystallized to form a polysilicon layer. A transfer apparatus is coupled to the stage and transfers the stage so that the mask is transferred by a uniform pitch along a direction parallel with one side of the insulation substrate. The slit part has a rectangular shape.</p> |
申请公布号 |
KR20080012567(A) |
申请公布日期 |
2008.02.12 |
申请号 |
KR20060073551 |
申请日期 |
2006.08.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUNG HYUN;KIM, DONG BYUM;PARK, JI YONG;YI, CHUNG |
分类号 |
H01L21/32;G02F1/133;G02F1/136;H01L29/786 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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