发明名称 |
Nitride-based compound semiconductor electron device including a buffer layer structure |
摘要 |
A GaN-based FET has a buffer layer structure including GaN first buffer layer and an AlGaN second buffer layer between a substrate and an active layer structure including a channel layer and a donor layer. The GaN first buffer layer and the AlGaN second buffer layer reduce dislocation defects in the active layer structure and allows the FET to have a lower leakage current and a satisfactory pinch-off characteristic. A plurality of GaN first buffer layers and a plurality of AlGaN second buffer layers may be deposited alternately one on another on the substrate.
|
申请公布号 |
US7329908(B2) |
申请公布日期 |
2008.02.12 |
申请号 |
US20040812947 |
申请日期 |
2004.03.31 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA SEIKOH |
分类号 |
H01L29/812;H01L31/072;H01L21/338;H01L29/15;H01L29/20;H01L29/778;H01L31/0328;H01L31/0336;H01L31/109 |
主分类号 |
H01L29/812 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|