发明名称 |
Method for forming silicon-containing film and method for decreasing number of particles |
摘要 |
A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.
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申请公布号 |
US7329591(B2) |
申请公布日期 |
2008.02.12 |
申请号 |
US20060358971 |
申请日期 |
2006.02.21 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIU CHE-HUNG;CHENG PO-LUN;CHUANG HWEI-LIN;LIN CHUN-AN |
分类号 |
C23C16/24 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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