| 摘要 |
A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) ( 100, 200 ) that includes a semiconductor substrate ( 110 ) having a first conductivity type and buried semiconductor region ( 115 ) having a second conductivity type located above the semiconductor substrate. The IGBT further includes a first semiconductor region ( 120 ) having the first conductivity type located above the buried semiconductor region, a second semiconductor region ( 130 ) having the second conductivity type located above at least a portion of the first semiconductor region, an emitter ( 150 ) having the second conductivity type disposed in the second semiconductor region, and a collector ( 170 ) having the second conductivity type disposed in the first semiconductor region. A sinker region ( 140 ) is provided to electrically tie the buried semiconductor region ( 115 ) to the second semiconductor region ( 130 ). In a particular embodiment, the second semiconductor region and the buried semiconductor region deplete the first semiconductor region in response to a reverse bias potential applied across the semiconductor component.
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