发明名称 |
Semiconductor memory device including storage nodes and resistors and method of manufacturing the same |
摘要 |
A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments of the invention includes forming an interlayer insulation layer on a semiconductor substrate including a memory cell array area and a core/perimeter area; forming a first etch stop layer thereon; forming a plurality of contact plugs arranged linearly in at least one direction on the memory cell array area; forming a first conductive layer on the resultant structure; forming a second etch stop layer thereon; etching the second etch stop layer and the first conductive layer and forming landing pads and resistors arranged non-linearly in at least one direction; and forming storage nodes on the entire outer lateral surfaces of which are exposed, on the landing pads.
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申请公布号 |
US7329918(B2) |
申请公布日期 |
2008.02.12 |
申请号 |
US20060419710 |
申请日期 |
2006.05.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO CHANG-HYUN;CHUNG TAE-YOUNG;AHN YONG-SEOK |
分类号 |
H01L27/108;H01L21/02;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/02;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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