| 摘要 |
<p>A photoresist composition, and a method for forming a pattern by using the composition are provided to improve profile and the depth of focus and to obtain satisfactory sensitivity, resolution, coating property and residual film rate. A photoresist composition comprises 100 parts by weight of a novolac base resin; 30-60 parts by weight a sensitizer; and 10-30 parts by weight a low molecular sieve of low absorbance, wherein the absorbance of the low molecular sieve is lower than that of the novolac base resin in at least one wavelength of 248 nm, 193 nm and 157 nm, and the composition is used at the wavelength below 248 nm. Preferably the low molecular sieve comprises a compound represented by the formula 1, wherein R1 and R2 are independently H, a hydroxyl group or a C1-C10 alkyl group; and n1 is an integer of 1-5.</p> |
