发明名称 Integrated circuits and methods of forming a field effect transistor
摘要 Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semiconductive material. Semiconductor material is formed on the insulative material. A field effect transistor is included and comprises a gate, a channel region, and a pair of source/drain regions. In one implementation, one of the source/drain regions is formed in the semiconductor material, and the other of the source/drain regions is formed in the bulk semiconductive material. In one implementation, the electrically insulative material extends from beneath one of the source/drain regions to beneath only a portion of the channel region. Other aspects and implementations, including methodical aspects, are disclosed.
申请公布号 US7329924(B2) 申请公布日期 2008.02.12
申请号 US20070704487 申请日期 2007.02.09
申请人 MICRON TECHNOLOGY, INC. 发明人 TANG SANH D.;HALLER GORDON
分类号 H01L27/12 主分类号 H01L27/12
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