Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.
申请公布号
US7329586(B2)
申请公布日期
2008.02.12
申请号
US20050166357
申请日期
2005.06.24
申请人
APPLIED MATERIALS, INC.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人
VELLAIKAL MANOJ;MUNGEKAR HEMANT P.;LEE YOUNG S.;OKUNO YASUTOSHI;YUASA HIROSHI