发明名称 Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition
摘要 A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly normal to the surface of the sensor layers. A second (glancing) ion mill is then performed at a larger angle with respect to the normal. The first ion mill may be 0-30 degrees with respect to normal, whereas the second ion mill can be 50-89 degrees with respect to normal. The first ion mill is performed with a larger bias voltage than the second ion mill. The higher bias voltage of the first ion mill provides a well collimated ion beam to form straight vertical side walls. The lower bias voltage of the second ion mill prevent damage to the sensor layers during the removal of redep from the sides of the sensor.
申请公布号 US7329362(B2) 申请公布日期 2008.02.12
申请号 US20050200757 申请日期 2005.08.09
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 CYRILLE MARIE-CLAIRE;HONG YING;JAYASEKARA WIPUL PEMSIRI
分类号 B44C1/22;G11B5/31;G11B5/39 主分类号 B44C1/22
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