| 摘要 |
A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.
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