| 摘要 |
A non-volatile memory device and a method of manufacturing the same where the non-volatile memory device is easily applicable to higher integration of a semiconductor device by reducing a cell size while assuring storage capacities required for operations of a device. The non-volatile memory device includes a semiconductor substrate in which an active region is defined by an isolation layer and a protruding portion is formed on the active region, a source region formed on the protruding portion, first and second gates formed at both sidewalls of the protruding portion and the source region, first and second drain regions formed in the active region at the outside of the first and second gates, and an insulation layer formed between the first and second gates and the protruding portion and the source region.
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