| 摘要 |
<p>A non-volatile memory device and a method for manufacturing the same are provided to prevent oxidation of a common source line exposed by a furnace anneal process by mutually connecting a common source line with a metal line by using an active region doped with impurity ions. A non-volatile memory device includes a first and second selection transistors(SST) and a plurality of strings having a plurality of memory cells(MC) connected serially between the first and second selection transistors. A common source line(CSL) is formed in the inside of the strings in order to be connected with a source of the second selection transistor. A metal line is electrically isolated from the common source line and is connected to a source of one of the second selection transistors. The source of the second selection transistor connected to the metal line has a protrusive part in an extended direction of the common source line.</p> |
