| 摘要 |
A method for manufacturing a CMOS image sensor is provided to enhance productivity by preventing an alignment error previously. A metal line(102) is formed on a semiconductor substrate(101) including a photodiode and a transistor. An interlayer dielectric including a BPSG layer(103) is formed on a front surface of the semiconductor substrate including the metal line. A capping layer including an USG layer(104) is formed on the interlayer dielectric. A hard mask layer including an SiN layer(105) is formed on the capping layer. A contact hole extended to the metal line and a surface of the semiconductor substrate is formed by removing the hard mask layer, the capping layer, and the interlayer dielectric selectively. A tungsten layer(107) is deposited on the front surface of the semiconductor substrate including the contact hole. A CMP process is performed to form a tungsten plug within the contact hole.
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