| 摘要 |
<p>A reprogrammable non-volatile memory cell is provided to embody a high integration density of a memory or a memory chip by including a space-saving lateral dimension on the surface of a substrate in which a substantially vertical arrangement is required for isolation layers of individual memory cells and re-programmable dielectric layers. A selection transistor(10) includes an isolation layer, a first terminal on the isolation layer, a second terminal under the isolation layer and a region under the first terminal, and a third terminal under the isolation layer and a region under the first terminal wherein the third terminal is separated from the second terminal. A data storage element(20) includes a fourth terminal, a fifth terminal and a reprogrammable dielectric layer(170). The fourth and fifth terminals of the data storage element are separated from each other by the reprogrammable dielectric layer. The third terminal of the selection transistor is electrically connected to the fourth terminal of the data storage element. The reprogrammable dielectric layer of the data storage element is substantially vertically disposed with respect to the isolation layer of the selection transistor. The third terminal of the selection transistor is the same terminal as the fourth terminal of the data storage element.</p> |
