发明名称 THE LOW VOLTAGE ELECTRIC CHARGE PUMP CIRCUIT WHICH USES THE NONVLOATILE MEMORY DEVICE
摘要 A low voltage electric charge pump circuit using a nonvolatile memory device is provided to control an output voltage at random by preventing the decrease of a final output voltage of the charge pump circuit according to the decrease of the conventional power supply voltage by controlling a threshold voltage. A power supply voltage input part(10) inputs a power supply voltage. A number of charge transfer devices(20) are connected to the power supply voltage input part, and pump a power supply voltage. A number of charge storing devices(30) are connected to the charge transfer devices and comprise a capacitor. A clock driver(40) transfers a complementary clock to the charge storing devices. The charge transfer device comprises a nonvolatile memory device including a floating gate, a control gate, a program gate node, a source and drain and controlling an electrical threshold voltage of the device by a voltage applied to the program gate. The charge transfer device is electrically connected through diode connection by connecting the control gate and the drain directly. A transmission gate(50) preventing valid coupling ratio of the nonvolatile memory device from being changed by the charge storing device in controlling the threshold voltage through the nonvolatile memory device is electrically connected between the charge storing device and the charge transfer device.
申请公布号 KR20080011819(A) 申请公布日期 2008.02.11
申请号 KR20060072272 申请日期 2006.07.31
申请人 CHUNG CHOUNG BUK DO;CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION 发明人 NA, KEE YEOL;SHIN, YOON SOO;PARK, KEUN HYUNG;CHOI, HO YONG;KIM, YEONG SEUK
分类号 G11C16/00;G11C16/34 主分类号 G11C16/00
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