| 摘要 |
A method for forming a dielectric layer of a semiconductor memory device is provided to shorten a process time by sequentially depositing a first oxide layer, a nitride layer and a second oxide layer by an RA-CVD(radical assisted chemical vapor deposition) method and by depositing a dielectric layer in one equipment by an in-situ method. A tunnel oxide layer(11) and a conductive layer(12) for a floating gate are formed on a semiconductor substrate(10). A pretreatment cleaning process is performed to remove a native oxide layer formed on the surface of the conductive layer for the floating gate. A first oxide layer(14), a nitride layer(15) and a second oxide layer(16) are sequentially deposited on the conductive layer for the floating gate to form an ONO(oxide nitride oxide) dielectric layer(17) by an RA-CVD method in which reaction gas is generated as a radical type.
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