ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEM0RY DEVICE,申请号KR20060133936-传众专利搜索

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发明名称	ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEM0RY DEVICE
摘要
申请公布号	KR100801394(B1)	申请公布日期	2008.02.11
申请号	KR20060133936	申请日期	2006.12.26
申请人		发明人
分类号	G11C16/02;G11C16/04;G11C16/24;G11C16/30	主分类号	G11C16/02
代理机构		代理人
主权项
地址

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