| 摘要 |
A method for manufacturing an image sensor is provided to enhance characteristics of the image sensor by forming a thickness of each of color filters of the image sensor uniformly. A first to third photodiode structures(20,30,40) including a first to third photodiodes are formed on a semiconductor substrate(10). A first color filter(72) corresponding to the first photodiode is formed. A second color filter(74) corresponding to the third photodiode is formed. A third color filter film(75) is formed at a position corresponding to the second photodiode. The third color filter film has a first height at a center part of the second photodiode and has a second height at an edge part of the second photodiode. The second height is higher than the first height. The third color filter film is exposed by using an exposure mask having a first opening and a second opening. A third color filter is formed by developing the exposed third color filter film.
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