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发明名称
Method for fabricating trench isolation in semiconductor device
摘要
申请公布号
KR100801739(B1)
申请公布日期
2008.02.11
申请号
KR20060058937
申请日期
2006.06.28
申请人
发明人
分类号
H01L21/762
主分类号
H01L21/762
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代理人
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