| 摘要 |
<p>A method for forming a mask pattern is provided to form a mask pattern not more than a resolution limit by using an oxide layer formed by an oxide process of a silicon layer patterned by conventional exposure equipment. A silicon layer is formed on a substrate(100). The silicon layer is patterned. The patterned silicon layer is oxidized so that the entire surface of the silicon layer is made of an oxide layer with a predetermined thickness. The oxide layer is removed to expose the upper surface of the silicon layer. The silicon layer is removed to form a mask pattern(130a) made of a residual oxide layer. The width of the mask pattern is smaller than that of the patterned silicon layer.</p> |
