| 摘要 |
A method for growing a gallium nitride crystal is provided to fabricate a low-defect gallium nitride substrate for fabricating a high-quality laser device by fabricating a laser device in a portion of a low-defect region. A mask(M) is partially formed on a basic substrate(U) to avoid an epitaxial growth of a crystal. A crystal is epitaxially grown on the basic substrate having the mask by a vapor phase method. In the epitaxial growth, a crystal growth is formed by a first growth condition indicated by (a1/T+b1)<Vj<(a2/T+b2) wherein Vj is a growth speed indicated by a unit of micrometer/hour, T is a growth temperature indicated by the absolute temperature, a1 is -4.39x10^5, b1 is 3.87x10^2, a2 is -7.36x10^5 and b2 is 7.37x10^2.
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