| 摘要 |
<p>A photomask is provided to reduce a density difference between a main chip and a test pattern and decrease a difference of CD(critical dimension) by forming a dense and uniform layout density. Main chips are arranged in a total frame(200), disposed between adjacent patterns and separated from each other by a predetermined distance. A test pattern is disposed in a frame region between the main chips. A monitoring pattern is disposed in the frame region between the main chip. The entire total frame is filled with a dummy pattern(210). The main chip can have the same size as the dummy pattern filling the rest of the frame region except the main chip.</p> |
