| 摘要 |
A method for manufacturing a semiconductor device having a bulb type recessed channel is provided to reduce parasitic capacitance and to minimize junction leakage current by forming a bulb type recess channel and a bottom protrusion part. A trench is formed on a semiconductor substrate(100) in order to set an active region including a channel region and a junction region. An isolation layer is formed to bury the trench. A sidewall pattern is formed to cover a sidewall of the channel region. A bulb type trench is formed to be overlapped with the channel region of the semiconductor substrate. A bottom protrusion part is formed apart from the isolation layer by removing the sidewall pattern. A gate stack(140) is formed to be overlapped with the bulb type trench and the bottom protrusion part.
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