METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase an operation speed of a P-MOSFET without decreasing an operation speed of an N-MOSFET by allowing a cap layer to have a compressive stress. A gate oxide layer(33) is deposited on a semiconductor substrate(31) to form a gate(35). A spacer(37) is formed on a lateral side of the gate and then an impurity region(39) is formed on the semiconductor substrate. A cap layer(41) having compressive stress is formed on the semiconductor substrate to cover the gate. An impurity ion implantation process is performed to make a portion corresponding to an impurity region of the cap layer have a local tensile stress. The cap layer is formed by depositing SiN through a PECVD method. The impurity includes Ge.