| 摘要 |
<p>A double-gate type DRAM driving circuit and a driving method thereof are provided to perform reliable write operation, as performing refresh by writing data stored in a register again. According to 1-transistor DRAM having a double-gate structure, a transistor stores data on a floating body. A word line is formed on the transistor and controls the transistor. A bottom word line is formed on the bottom of the transistor and controls the transistor. A sensing line is connected to a sensing line contact of the transistor. A bit line is connected to a bit line contact of the transistor. A sense amplifier senses data on the bit line. A register is connected to the bit line.</p> |
