| 摘要 |
<p>A method for forming a mask pattern of a semiconductor device is provided to improve a fabrication yield and an electrical characteristic by enabling a proportional corner correction with respect to a plurality of stacked patterns in using an OPC(optical proximity correction) for forming a mask pattern of a semiconductor device. A main pattern on a design is aligned with the corner of a photoresist pattern determined by a real exposure condition. The position of a center point of a circle having a circumference as a circular pattern at the corner of the photoresist pattern is derived. A reference line is formed which connects the corner of the main pattern with the center point. Two extension lines(701,702) connected from the center point to the main pattern are bilaterally symmetric with respect to the reference line. OPC patterns(801,802) are disposed at the corner of the main pattern to fall within a range limited by the two extension lines. The edge portion of the line width of the main pattern can equally be expanded or contracted to form an extended or contracted main pattern. The OPC patterns can be disposed at the corner of the main pattern and at the corner of the extended or contracted main pattern to fall within the range limited by the two extension lines.</p> |
