发明名称 DATA OUPUT CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要 A data output circuit for a semiconductor memory device is provided to improve data read speed by reducing loading of a global input/output line by controlling the output of a single multiplexer. A multiplexer(30) outputs a plurality of global input/output lines selectively according to a control signal. A control part(40) generates the control signal with an operation mode signal corresponding to data width and an address signal provided for data selection. A multiplexer driving part(50) amplifies the output of the multiplexer and transfers the amplified output to a data input/output pin. The multiplexer comprises a switching unit outputting corresponding data selectively in response to the control signal at each global input/output line.
申请公布号 KR100800160(B1) 申请公布日期 2008.02.01
申请号 KR20060086448 申请日期 2006.09.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KO, BOK RIM
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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