| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent generation of a bridge inducing a short between a gate electrode and a source/drain impurity diffusion region by performing a silicide annealing process after nitrogen ions are implanted. A transistor is formed on a semiconductor substrate(101). The transistor is configured with a gate electrode(104) and a source/drain impurity diffusion region(107). A sidewall spacer(106) is formed on the gate electrode. Nitrogen ions are implanted into the sidewall spacer, and then a silicide annealing process is performed on the sidewall spacer to transform a silicide in the sidewall spacer into a nitride. An implantation angle of the nitrogen ion is tilted. The nitride on the sidewall spacer is removed by using H2SO4. The nitrogen ion is implanted into 40 Å to 60 Å deep from a surface of the sidewall spacer.</p> |
