发明名称 EQUIPMENT FOR CHEMICAL VAPOR DEPOSITION
摘要 CVD equipment is provided to prevent the clog of an injector and to increase a replacement interval of the injector by using a cleaning module for cleaning the injector in which a TEOS liquid flows. A reactive chamber(200) provides a closed space. A reactive gas supply unit(400) supplies a first reactive gas in the reactive chamber. A reactive gas supply line(410) is communicated with the reactive gas supply unit and the reactive chamber to flow the first reactive gas. A raw material supply unit(600) supplies one or more liquid materials being used for generating a second reactive gas that is mixed with the first reactive gas. A liquid raw material supply line(610) flows the liquid raw material from the raw material supply unit to the reactive gas supply line. An injector(700) injects the liquid raw material at a section where the liquid raw material supply line and the reactive gas supply line are connected to each other. A cleaning module includes an inert gas supply unit, inert gas supply lines, and an LSU valve. The inert gas supply unit generates a pressurized inert gas to clean the liquid raw material on an inner wall of the injector or a deposition material generated by a chemical combination between the liquid raw material and the first reactive gas.
申请公布号 KR100800377(B1) 申请公布日期 2008.02.01
申请号 KR20060085956 申请日期 2006.09.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN SUNG
分类号 H01L21/205 主分类号 H01L21/205
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