| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-pulsating semiconductor laser which can stably keep self-pulsation in a wide temperature range. SOLUTION: The self-pulsating semiconductor laser is provided with a lower clad layer 103 formed on a semiconductor substrate 101, an active layer 105 formed on the lower clad layer 103, a first upper clad layer 107 formed on the active layer 105, a second upper clad layer 109 formed on the first upper clad layer 107, and a block layer BLK. The second upper clad layer 109 has a mesa structure MS. The block layer BLK is formed on both sides of the second upper clad layer 109, and it includes a layer 111 with a larger band gap than the active layer 105. During self pulsation, a saturable absorption area 115 is formed on both sides of a gain area 114 in the active layer 105. The thickness (d) of the first upper clad layer 107 is designed to be more than 220 nm and less than 450 nm. COPYRIGHT: (C)2008,JPO&INPIT
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