发明名称 |
Structure and method to implement dual stressor layers with improved silicide control |
摘要 |
An example embodiment for a method of fabrication of a semiconductor device comprises the following. We provide a substrate with a first device region and a second device region. We provide a first type FET transistor in the first device region and provide a second type FET transistor in the second device region. We form an etch stop layer over the first and second device regions and forming a first stressor layer over the first device region. The first stressor layer puts a first type stress on the substrate in the first device region. We form a second stressor layer over the second device region. The second stressor layer puts a second type stress on the substrate in the second device region. Another example embodiment is the structure of a dual stress layer device having an etch stop layer.
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申请公布号 |
US2008026523(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20060495508 |
申请日期 |
2006.07.28 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD AND INTERNATIONAL BUSINESS MACHINES CORPORATION (IBM) |
发明人 |
LEE YONG MENG;YANG HAINING S.;CHAN VICTOR;LIM ENG HUA |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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