发明名称 |
Non-volatile memory device and methods of operating and fabricating the same |
摘要 |
Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory device may include a plurality of first storage node films and a plurality of first control gate electrodes on a semiconductor substrate. A plurality of second storage node films and a plurality of second control gate electrodes may be recessed into the semiconductor substrate between two adjacent first control gate electrodes and below the bottom of the plurality of first control gate electrodes. A plurality of bit line regions may be on the semiconductor substrate and each may extend across the plurality of first control gate electrodes and the plurality of second control gate electrodes.
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申请公布号 |
US2008023749(A1) |
申请公布日期 |
2008.01.31 |
申请号 |
US20070724290 |
申请日期 |
2007.03.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WON-JOO;KIM SUK-PIL;PARK YOON-DONG;KOO JUNE-MO |
分类号 |
H01L29/788;G11C5/14;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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