| 摘要 |
A structure combining an IC integrated substrate and a carrier and a method for manufacturing the same are provided to produce an electronic device with a multilayer interconnection structure, at least one semiconductor device or a combination thereof. An IC integrated substrate(8) is formed on a carrier(10) and has a first dielectric layer(14) adhered to the carrier. The material of the carrier and the material of the IC integrated substrate are selected so that the IC integrated substrate is not detached from the carrier in a process by adhering the carrier to the IC integrated substrate and is separated from the carrier naturally after being cut. The interface between the carrier and the first dielectric layer is not processed with an adhesive. The IC integrated substrate has a multilayer interconnection structure including at least one dielectric layer with the first dielectric layer and at least one metallic layer(22). At least one dielectric layer and at least one metallic layer are formed on the carrier alternately. |
