| 摘要 |
A method for forming a semiconductor device is provided to prevent a capacitor from falling down, perform a capacitor forming process stably, and form a height of a cylinder type capacitor unlimitedly. A method for forming a semiconductor device includes the steps of: forming an interlayer insulating layer(130) having a storage electrode contact plug(140) on a semiconductor substrate(100) with a predetermined bottom structure; forming a cylinder type first storage electrode(160) connected to the storage electrode contact plug; forming a first dielectric film(170) on a surface of the first storage electrode; forming a first conductive layer(180) for a top electrode on a front surface of the semiconductor substrate; etching the first conductive layer to expose the first storage electrode and the first dielectric film by a CMP(Chemical Mechanical Polishing) process; forming a cylinder type second storage electrode(210) connected to the exposed first storage electrode; making the first and second storage electrodes into one cylinder type by removing the second storage electrode; forming a second dielectric film(220) on a surface of the second storage electrode; and completing a capacitor by forming a second conductive layer(230) for the top electrode on the front surface of the semiconductor substrate.
|
