| 摘要 |
A plasma surface processing method, a quartz member, a plasma processing apparatus, and a plasma processing method are provided to produce a reliable semiconductor device by using a silicon nitride film formed by processing plasma nitride as a gate insulating film. A plasma processing apparatus includes a chamber(1), a planar antenna(31), and a control unit. The chamber performs evacuation for processing a target substrate with plasma. The planar antenna has a plurality of slots for introducing a microwave into the chamber. The control unit controls the plasma processing apparatus to perform a plasma surface treatment which is performed on a quartz member used under a plasma-exposed environment by using plasma having an ion energy greater than 5.3 eV.
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